IndiumV3, Russie, Analysis, bibRecord, 000F46

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Identifieur interne : 000F46 ( Russie/Analysis ); précédent : 000F45; suivant : 000F47

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Auteurs : RBID : Pascal:99-0023762

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoluminescence, Gallium nitrure, Epitaxie jet moléculaire, Cathodoluminescence, SIMS, 7855C, GaN, Ga N.

English descriptors

KwdEn :
- Cathodoluminescence, Experimental study, Gallium nitrides, Molecular beam epitaxy, Photoluminescence, SIMS.

Abstract

The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.

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Pascal:99-0023762

Le document en format XML

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   |clé=     Pascal:99-0023762
   |texte=   Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
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Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri